Datasheet > 晶体管 > IGBT> IRG4RC10KDPBF

IRG4RC10KDPBF

更新时间： 2024-02-05 02:56:56

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
12页	323K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

获取价格

数据手册
替代型号

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IRG4RC10KDPBF 数据手册

PD - 95035

IRG4RC10KDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated

UltraFast IGBT

Features

• Short Circuit Rated UltraFast: Optimized for

V_CES= 600V

high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10µs @ 125°C, V_GE= 15V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

V_{CE(on) typ.}= 2.39V

@V_GE= 15V, I_C= 5.0A

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

n-channel

• Industry standard TO-252AA package

• Lead-Free

Benefits

• Latest generation 4 IGBT's offer highest power density

motor controls possible

• HEXFRED^TMdiodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise, EMI and

switching losses

D-PAK

TO-252AA

• For hints see design tip 97003

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

9.0

I_C@ T_C= 100°C

5.0

I_CM

I_LM

I_F@ T_C= 100°C

4.0

I_FM

t_sc

± 20

µs

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.3

7.0

Units

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient (PCB mount)*

Weight

°C/W

–––

0.3 (0.01)

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

2/20/04

12 3 4 5 6 7...12

中文翻译

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IRG4RC10KDPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRG4RC10KDTRPBF	INFINEON	完全替代	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE,

与IRG4RC10KDPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG4RC10KDTR	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA
IRG4RC10KDTRL	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA
IRG4RC10KDTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE,
IRG4RC10KDTRR	INFINEON	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 5A I(C) \| TO-252AA
IRG4RC10KDTRRPBF	INFINEON	获取价格	暂无描述
IRG4RC10KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
IRG4RC10KTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10KTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
IRG4RC10SD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ

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