Datasheet > 晶体管 > IGBT> IRG4RC10SD

IRG4RC10SD

更新时间： 2024-02-19 17:32:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管功率控制瞄准线栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	190K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

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中文翻译

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技术参数
数据手册
替代型号

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IRG4RC10SD 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

IRG4RC10SD 数据手册

PD 91678A

IRG4RC10SD

Standard Speed CoPack

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

IGBT

• Extremely low voltage drop 1.1V(typ) @ 2A

• S-Series: Minimizes power dissipation at up to 3

KHz PWM frequency in inverter drives, up to 4

V_CES= 600V

_{CE(on) typ.}= 1.10V

KHz in brushless DC drives.

• Tight parameter distribution

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use

@V_GE= 15V, I_C= 2.0A

n-channel

in bridge configurations

• Industry standard TO-252AA package

Benefits

• Generation 4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

D-PAK

• Lower losses than MOSFET's conduction and

Diode losses

TO-252AA

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.0

I_CM

I_LM

I_F@ T_C= 100°C

4.0

I_FM

± 20

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

–––

Max.

Units

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient (PCB mount)*

Weight

3.3

7.0

–––

°C/W

–––

0.3 (0.01)

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/30/00

12 3 4 5 6 7...10

中文翻译

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IRG4RC10SD 替代型号

型号	品牌	替代类型	描述	数据表
IRG4RC10SDTRPBF	INFINEON	完全替代	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10SDPBF	INFINEON	完全替代	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE

与IRG4RC10SD相关器件

型号	品牌	获取价格	描述	数据表
IRG4RC10SDPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10SDTR	INFINEON	获取价格	暂无描述
IRG4RC10SDTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC,
IRG4RC10SDTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10SDTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC,
IRG4RC10SDTRRP	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10STR	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 8A I(C) \| TO-252AA
IRG4RC10STRL	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 8A I(C) \| TO-252AA
IRG4RC10STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10STRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE

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