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IRG4PH50S PDF预览

IRG4PH50S

更新时间: 2024-02-12 15:56:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制局域网
页数 文件大小 规格书
8页 130K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)

IRG4PH50S 技术参数

是否Rohs认证:符合生命周期:End Of Life
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.37
Is Samacsys:N其他特性:LOW CONDUCTION LOSS
外壳连接:COLLECTOR最大集电极电流 (IC):45 A
集电极-发射极最大电压:1200 V配置:SINGLE
最大降落时间(tf):500 ns门极发射器阈值电压最大值:6 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):600 ns
标称接通时间 (ton):49 nsBase Number Matches:1

IRG4PH50S 数据手册

 浏览型号IRG4PH50S的Datasheet PDF文件第2页浏览型号IRG4PH50S的Datasheet PDF文件第3页浏览型号IRG4PH50S的Datasheet PDF文件第4页浏览型号IRG4PH50S的Datasheet PDF文件第5页浏览型号IRG4PH50S的Datasheet PDF文件第6页浏览型号IRG4PH50S的Datasheet PDF文件第7页 
PD -91712A  
IRG4PH50S  
Standard Speed IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
Features  
C
Standard: Optimized for minimum saturation  
voltage and low operating frequencies ( < 1kHz)  
Generation 4 IGBT design provides tighter  
parameter distribution and higher efficiency than  
Generation 3  
VCES =1200V  
VCE(on) typ. = 1.47V  
G
Industry standard TO-247AC package  
@VGE = 15V, IC = 33A  
E
n-channel  
Benefits  
Generation 4 IGBT's offer highest efficiency available  
IGBT's optimized for specified application conditions  
Designed to be a "drop-in" replacement for equivalent  
industry-standard Generation 3 IR IGBT's  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
1200  
57  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current  
IC @ TC = 25°C  
IC @ TC = 100°C  
33  
A
ICM  
114  
ILM  
Clamped Inductive Load Current ‚  
Gate-to-Emitter Voltage  
114  
VGE  
20  
V
mJ  
W
EARV  
Reverse Voltage Avalanche Energyƒ  
Maximum Power Dissipation  
270  
PD @ TC = 25°C  
200  
PD @ TC = 100°C Maximum Power Dissipation  
80  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, typical socket mount  
Weight  
Typ.  
–––  
0.24  
Max.  
0.64  
–––  
40  
Units  
°C/W  
RθJC  
RθCS  
RθJA  
Wt  
–––  
6.0 (0.21)  
–––  
g (oz)  
www.irf.com  
1
7/7/2000  

IRG4PH50S 替代型号

型号 品牌 替代类型 描述 数据表
IRG4PH50SPBF INFINEON

完全替代

INSULATED GATE BIPOLAR TRANSISTOR

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