Datasheet > IRG4PH50SPBFEL

IRG4PH50SPBFEL

更新时间： 2024-11-26 05:25:39

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
8页	227K
描述
Insulated Gate Bipolar Transistor, 57A I(C), 1200V V(BR)CES, N-Channel, TO-247AC,

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IRG4PH50SPBFEL 数据手册

PD -95525A

IRG4PH50SPbF

INSULATED GATE BIPOLAR TRANSISTOR

Standard Speed IGBT

Features

Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

_CES=1200V

_{CE(on) typ.}= 1.47V

Industry standard TO-247AC package

Lead-Free

@V_GE= 15V, I_C= 33A

n-channel

Benefits

Generation 4 IGBT's offer highest efficiency available

IGBT's optimized for specified application conditions

Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

TO-247AC

Absolute Maximum Ratings

Parameter

Units

Max.

1200

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

114

± 20

± 30

270

200

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

V_GE

E_ARV

P_D@ T_C=25°

P_D@ T_C=100°

T_J

Maximum Power Dissipation

Operating Junction and

-55 to + 150

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Mounting Torque, 6-32 or M3 Screw.

Thermal Resistance

Parameter

Min.

—

Typ.

—

Max.

0.64

—

Units

°C/W

g (oz)

R_θ

Junction-to-Case

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

—

6.0(0.21)

—

www.irf.com

07/08/08

12 3 4 5 6 7 8

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