Datasheet > 晶体管 > IGBT> IRG4PH50UD

IRG4PH50UD

更新时间： 2024-02-13 18:26:26

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管功率控制栅局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	229K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

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替代型号

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IRG4PH50UD 数据手册

PD 91573A

IRG4PH50UD

UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• UltraFast: Optimized for high operating

frequencies up to 40 kHz in hard switching,

>200 kHz in resonant mode

V_CES= 1200V

V_{CE(on) typ.}= 2.78V

• New IGBT design provides tighter

parameter distribution and higher efficiency than

previous generations

@V_GE= 15V, I_C= 24A

• IGBT co-packaged with HEXFRED^TMultrafast,

n-channel

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-247AC package

Benefits

• Higher switching frequency capability than

competitive IGBTs

• Highest efficiency available

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

1200

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

180

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

180

I_F@ T_C= 100°C

I_FM

180

V_GE

200

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

Max.

0.64

0.83

–––

Units

R_θJC

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

R_θJC

–––

°C/W

R_θCS

0.24

R_θJA

–––

6 (0.21)

–––

g (oz)

www.irf.com

7/7/2000

12 3 4 5 6 7...10

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IRG4PH50UD 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50FDPBF	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UDPBF	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PF50WDPBF	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IRG4PH50UD相关器件

型号	品牌	获取价格	描述	数据表
IRG4PH50UD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH50UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH50U-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH50UPBF	INFINEON	获取价格	Ultra Fast Speed IGBT
IRG4PSC71K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)
IRG4PSC71KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PSC71KDPBF	INFINEON	获取价格	INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Ul
IRG4PSC71U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
IRG4PSC71UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PSC71UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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