IRG4PSH71

更新时间： 2024-09-30 22:26:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	148K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)

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中文翻译

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数据手册

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IRG4PSH71 数据手册

PD - 91687A

IRG4PSH71K

PRELIMINARY

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

V_CES= 1200V

• Hole-less clip/pressure mount package compatible

with TO-247 and TO-264, with reinforced pins

V_{CE(on) typ.}= 2.97V

• High short circuit rating IGBTs, optimized for

motorcontrol

• Minimum switching losses combined with low

conduction losses

• Tightest parameter distribution

• Creepage distance increased to 5.35mm

@V_GE= 15V, I_C= 42A

n-channel

Benefits

• Highest current rating IGBT

• Maximum power density, twice the power

handling of the TO-247, less space than TO-264

SUPER - 247

Absolute Maximum Ratings

Parameter

Max.

1200

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current ➀

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

156

I_LM

Clamped Inductive Load Current ➁

Short Circuit Withstand Time

Gate-to-Emitter Voltage

156

t_SC

µs

V_GE

± 20

170

E_ARV

Reverse Voltage Avalanche Energy ➂

Maximum Power Dissipation

P_D@ T_C= 25°C

350

P_D@ T_C= 100°C Maximum Power Dissipation

140

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (0.063 in. (1.6mm from case )

Thermal Resistance\ Mechanical

Parameter

Junction-to-Case

Min.

–––

Typ.

–––

Max.

0.36

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Recommended Clip Force

Weight

–––

0.24

°C/W

–––

20.0(2.0)

–––

N (kgf)

g (oz)

6 (0.21)

www.irf.com

5/11/99

12 3 4 5 6 7 8

中文翻译

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与IRG4PSH71相关器件

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IRG4PSH71UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH
IRG4PSH71UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRG4RC10K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
IRG4RC10KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ