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IRG4PH50KD-E PDF预览

IRG4PH50KD-E

更新时间: 2024-01-01 12:19:08
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网电动机控制瞄准线晶体管
页数 文件大小 规格书
11页 226K
描述
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

IRG4PH50KD-E 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.11
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):45 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):225极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):700 ns标称接通时间 (ton):139 ns
Base Number Matches:1

IRG4PH50KD-E 数据手册

 浏览型号IRG4PH50KD-E的Datasheet PDF文件第2页浏览型号IRG4PH50KD-E的Datasheet PDF文件第3页浏览型号IRG4PH50KD-E的Datasheet PDF文件第4页浏览型号IRG4PH50KD-E的Datasheet PDF文件第5页浏览型号IRG4PH50KD-E的Datasheet PDF文件第6页浏览型号IRG4PH50KD-E的Datasheet PDF文件第7页 
PD- 91575B  
IRG4PH50KD  
Short Circuit Rated  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
High short circuit rating optimized for motor control,  
tsc =10µs, VCC = 720V , TJ = 125°C,  
VGE = 15V  
UltraFast IGBT  
C
VCES = 1200V  
VCE(on) typ. = 2.77V  
Combines low conduction losses with high  
switching speed  
G
@VGE = 15V, IC = 24A  
Tighter parameter distribution and higher efficiency  
than previous generations  
E
n-channel  
IGBT co-packaged with HEXFREDTM ultrafast,  
ultrasoft recovery antiparallel diodes  
Benefits  
Latest generation 4 IGBT's offer highest power density  
motor controls possible  
HEXFREDTM diodes optimized for performance with IGBTs.  
Minimized recovery characteristics reduce noise, EMI and  
switching losses  
This part replaces the IRGPH50KD2 and IRGPH50MD2  
products  
For hints see design tip 97003  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
Gate-to-Emitter Voltage  
1200  
V
IC @ TC = 25°C  
45  
IC @ TC = 100°C  
24  
ICM  
90  
A
ILM  
90  
IF @ TC = 100°C  
16  
IFM  
90  
tsc  
10  
µs  
V
VGE  
20  
200  
PD @ TC = 25°C  
Maximum Power Dissipation  
W
PD @ TC = 100°C Maximum Power Dissipation  
78  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1 N•m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
Max.  
0.64  
0.83  
–––  
40  
Units  
RθJC  
RθJC  
RθCS  
RθJA  
Wt  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
°C/W  
0.24  
–––  
6 (0.21)  
–––  
g (oz)  
www.irf.com  
1
7/7/2000  

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