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IRG4PH40UD2-E PDF预览

IRG4PH40UD2-E

更新时间: 2024-01-15 16:01:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管功率控制双极性晶体管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 250K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4PH40UD2-E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.01外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):820 ns
标称接通时间 (ton):54 nsBase Number Matches:1

IRG4PH40UD2-E 数据手册

 浏览型号IRG4PH40UD2-E的Datasheet PDF文件第2页浏览型号IRG4PH40UD2-E的Datasheet PDF文件第3页浏览型号IRG4PH40UD2-E的Datasheet PDF文件第4页浏览型号IRG4PH40UD2-E的Datasheet PDF文件第5页浏览型号IRG4PH40UD2-E的Datasheet PDF文件第6页浏览型号IRG4PH40UD2-E的Datasheet PDF文件第7页 
PD - 96781  
IRG4PH40UD2-E  
UltraFast CoPack IGBT  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
Features  
• UltraFast IGBT optimized for high operating  
frequencies up to 200kHz in resonant mode  
• IGBT co-packaged with HEXFREDTM ultrafast  
VCES=1200V  
VCE(on) typ. = 2.43V  
ultra-soft-recovery anti-parallel diode for use in  
resonant circuits  
G
• Industry standard TO-247AD package with  
extended leads  
@VGE = 15V, IC = 21A  
E
n-channel  
Benefits  
• Higher switching frequency capability than  
competitive IGBTs  
• Highest efficiency available  
• HEXFRED diodes optimized for performance with  
IGBTs. Minimized recovery characteristics require  
less / no snubbing  
Applications  
• Induction cooking systems  
• Microwave Ovens  
TO-247AD  
• Resonant Circuits  
Absolute Maximum Ratings  
Parameter  
Max.  
1200  
41  
Units  
V
A
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
IC @ TC = 25°C  
IC @ TC = 100°C Continuous Collector Current  
21  
Pulse Collector Current  
ICM  
82  
Clamped Inductive Load current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
ILM  
82  
10  
IF @ Tc = 100°C  
IFM  
40  
±20  
160  
65  
V
VGE  
PD @ TC = 25°C Maximum Power Dissipation  
W
Maximum Power Dissipation  
Operating Junction and  
PD @ TC = 100°C  
TJ  
-55 to +150  
Storage Temperature Range  
Storage Temperature Range, for 10 sec.  
Mounting Torque, 6-32 or M3 screw  
°C  
TSTG  
300 (0.063 in. (1.6mm) from case)  
10 lbf in (1.1N m)  
Thermal / Mechanical Characteristics  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.77  
2.5  
Units  
°C/W  
RθJC  
Junction-to-Case- IGBT  
Junction-to-Case- Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
–––  
Rθ  
JC  
RθCS  
0.24  
–––  
–––  
40  
Rθ  
JA  
Wt  
–––  
6 (0.21)  
–––  
g (oz.)  
www.irf.com  
1
9/17/03  

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