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IRG4PH40UD2-EPBF

更新时间： 2024-09-30 01:10:43
品牌 Logo 应用领域
英飞凌 - INFINEON 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
11页 240K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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IRG4PH40UD2-EPBF 数据手册

 浏览型号IRG4PH40UD2-EPBF的Datasheet PDF文件第2页浏览型号IRG4PH40UD2-EPBF的Datasheet PDF文件第3页浏览型号IRG4PH40UD2-EPBF的Datasheet PDF文件第4页浏览型号IRG4PH40UD2-EPBF的Datasheet PDF文件第5页浏览型号IRG4PH40UD2-EPBF的Datasheet PDF文件第6页浏览型号IRG4PH40UD2-EPBF的Datasheet PDF文件第7页 
PD - 95239  
IRG4PH40UD2-EP  
UltraFast CoPack IGBT  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
Features  
• UltraFast IGBT optimized for high operating  
frequencies up to 200kHz in resonant mode  
• IGBT co-packaged with HEXFREDTM ultrafast  
ultra-soft-recovery anti-parallel diode for use in  
resonant circuits  
• Industry standard TO-247AD package with  
extended leads  
VCES=1200V  
VCE(on) typ. = 2.43V  
@VGE = 15V, IC = 21A  
G
E
• Lead-Free  
Benefits  
n-channel  
• Higher switching frequency capability than  
competitive IGBTs  
• Highest efficiency available  
• HEXFRED diodes optimized for performance with  
IGBTs. Minimized recovery characteristics require  
less / no snubbing  
Applications  
• Induction cooking systems  
• Microwave Ovens  
TO-247AD  
• Resonant Circuits  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current  
1200  
V
A
VCES  
41  
IC @ TC = 25°C  
21  
IC @ TC = 100°C  
82  
ICM  
Clamped Inductive Load current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
82  
10  
ILM  
IF @ Tc = 100°C  
40  
IFM  
±20  
V
VGE  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
160  
W
PD @ TC = 25°C  
65  
PD @ TC = 100°C  
-55 to +150  
TJ  
Storage Temperature Range  
Storage Temperature Range, for 10 sec.  
Mounting Torque, 6-32 or M3 screw  
°C  
TSTG  
300 (0.063 in. (1.6mm) from case)  
10 lbf in (1.1N m)  
Thermal / Mechanical Characteristics  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.77  
2.5  
Units  
°C/W  
Junction-to-Case- IGBT  
Rθ  
JC  
Junction-to-Case- Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
–––  
RθJC  
0.24  
–––  
–––  
40  
Rθ  
CS  
RθJA  
Wt  
–––  
6 (0.21)  
–––  
g (oz.)  
www.irf.com  
1
7/27/04  
1234567...11

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