Datasheet > 晶体管 > IGBT> IRG4PH40UD2PBF

IRG4PH40UD2PBF

更新时间： 2024-01-06 14:04:56

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管功率控制栅局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	268K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册

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IRG4PH40UD2PBF 数据手册

PD - 95570

IRG4PH40UD2PbF

UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

UltraFast: Optimized for high operating

frequencies up to 40 kHz in hard switching,

>200 kHz in resonant mode

V_CES=600V

V_{CE(on) typ.}= 1.72V

@V_GE= 15V, I_C= 20A

New IGBT design provides tighter

parameter distribution and higher efficiency than

previous generations

IGBT co-packaged with HEXFRED^TMultrafast,

n-channel

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

Industry standard TO-247AC package

Lead-Free

Benefits

Higher switching frequency capability than

competitive IGBTs

Highest efficiency available

HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

600

Units

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

160

I_CM

Clamped Inductive Load current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

160

I_LM

I_F@ Tc = 100°C

I_FM

±20

V_GE

Maximum Power Dissipation

Operating Junction and

160

P_D@ T_C= 25°C

P_D@ T_C= 100°C

-55 to +150

T_J

Storage Temperature Range

Storage Temperature Range, for 10 sec.

Mounting Torque, 6-32 or M3 screw

°C

T_STG

300 (0.063 in. (1.6mm) from case)

10 lbf in (1.1N m)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

0.77

2.5

Units

°C/W

Junction-to-Case- IGBT

R_θ

Junction-to-Case- Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

–––

R_θJC

0.24

–––

R_θ

R_θJA

–––

6 (0.21)

–––

g (oz.)

www.irf.com

07/19/04

12 3 4 5 6 7...10

中文翻译

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与IRG4PH40UD2PBF相关器件

型号	品牌	获取价格	描述	数据表
IRG4PH40UD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH40UD-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH40UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE
IRG4PH40U-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AC
IRG4PH40UPBF	INFINEON	获取价格	Ultra Fast Speed IGBT
IRG4PH50	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)ty
IRG4PH50K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
IRG4PH50KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)ty
IRG4PH50KD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH50KD-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD

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