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IRG4PH50

更新时间： 2024-09-28 22:16:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管栅超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 229K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)

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IRG4PH50 数据手册

 浏览型号IRG4PH50的Datasheet PDF文件第2页浏览型号IRG4PH50的Datasheet PDF文件第3页浏览型号IRG4PH50的Datasheet PDF文件第4页浏览型号IRG4PH50的Datasheet PDF文件第5页浏览型号IRG4PH50的Datasheet PDF文件第6页浏览型号IRG4PH50的Datasheet PDF文件第7页 
PD 91573A  
IRG4PH50UD  
UltraFast CoPack IGBT  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
C
• UltraFast: Optimized for high operating  
frequencies up to 40 kHz in hard switching,  
>200 kHz in resonant mode  
VCES = 1200V  
VCE(on) typ. = 2.78V  
• New IGBT design provides tighter  
G
parameter distribution and higher efficiency than  
previous generations  
@VGE = 15V, IC = 24A  
E
• IGBT co-packaged with HEXFREDTM ultrafast,  
n-channel  
ultra-soft-recovery anti-parallel diodes for use in  
bridge configurations  
• Industry standard TO-247AC package  
Benefits  
• Higher switching frequency capability than  
competitive IGBTs  
• Highest efficiency available  
• HEXFRED diodes optimized for performance with  
IGBT's . Minimized recovery characteristics require  
less/no snubbing  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
1200  
V
IC @ TC = 25°C  
45  
IC @ TC = 100°C  
24  
A
ICM  
180  
ILM  
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
180  
IF @ TC = 100°C  
16  
IFM  
180  
VGE  
20  
200  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
W
PD @ TC = 100°C Maximum Power Dissipation  
78  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
300 (0.063 in. (1.6mm) from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
0.64  
0.83  
–––  
40  
Units  
RθJC  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
RθJC  
–––  
°C/W  
RθCS  
0.24  
RθJA  
–––  
Wt  
6 (0.21)  
–––  
g (oz)  
www.irf.com  
1
7/7/2000  
1234567...10

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与IRG4PH50相关器件

型号 品牌 获取价格 描述 数据表
IRG4PH50K INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
IRG4PH50KD INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)ty
IRG4PH50KD-E INFINEON

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 		Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH50KD-EPBF INFINEON

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 		Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH50KDPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH50KPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH50S INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
IRG4PH50S-EPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH50SPBF INFINEON

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 		INSULATED GATE BIPOLAR TRANSISTOR
IRG4PH50SPBFEL INFINEON

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 		Insulated Gate Bipolar Transistor, 57A I(C), 1200V V(BR)CES, N-Channel, TO-247AC,

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