Datasheet > 晶体管 > IGBT> IRG4PH40UD2-EP

IRG4PH40UD2-EP

更新时间： 2024-11-20 23:13:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	231K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册

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IRG4PH40UD2-EP 数据手册

PD - 95239

IRG4PH40UD2-EP

UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

UltraFast IGBT optimized for high operating

frequencies up to 200kHz in resonant mode

IGBT co-packaged with HEXFRED^TMultrafast

ultra-soft-recovery anti-parallel diode for use in

resonant circuits

Industry standard TO-247AD package with

extended leads

V_CES=1200V

V_{CE(on) typ.}= 2.43V

@V_GE= 15V, I_C= 21A

Lead-Free

Benefits

n-channel

Higher switching frequency capability than

competitive IGBTs

Highest efficiency available

HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require

less / no snubbing

Applications

Induction cooking systems

Microwave Ovens

TO-247AD

Resonant Circuits

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current

1200

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Clamped Inductive Load current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_LM

I_F@ Tc = 100°C

I_FM

±20

V_GE

Maximum Power Dissipation

Operating Junction and

160

P_D@ T_C= 25°C

P_D@ T_C= 100°C

-55 to +150

T_J

Storage Temperature Range

Storage Temperature Range, for 10 sec.

Mounting Torque, 6-32 or M3 screw

°C

T_STG

300 (0.063 in. (1.6mm) from case)

10 lbf in (1.1N m)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

0.77

2.5

Units

°C/W

Junction-to-Case- IGBT

R_θ

Junction-to-Case- Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

–––

R_θJC

0.24

–––

R_θ

R_θJA

–––

6 (0.21)

–––

g (oz.)

www.irf.com

7/27/04

12 3 4 5 6 7...10

中文翻译

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与IRG4PH40UD2-EP相关器件

型号	品牌	获取价格	描述	数据表
IRG4PH40UD2-EPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD2-EPPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FRE
IRG4PH40UD2PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PH40UD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH40UD-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD
IRG4PH40UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE
IRG4PH40U-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AC
IRG4PH40UPBF	INFINEON	获取价格	Ultra Fast Speed IGBT
IRG4PH50	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)ty

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