IRFU410BTU

更新时间： 2024-09-14 13:00:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
7页	193K
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IRFU410BTU 数据手册

IRFU410A

Advanced Power MOSFET

IRFU410A

BV_DSS= 520 V

Improved Inductive Ruggedness

Rugged Polysilicon Gate Cell Structure

Fast Switching Times

R_DS(on)= 10.0

I_D= 1.2 A

Lower Input Capacitance

Improved Gate Charge

TO-220

Extended Safe Operating Area

Improved High Temperature Reliability

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

Units

V_DSS

520

1.2

0.8

4.0

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100

Drain Current-Pulsed

)

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

1.2

4.2

3.5

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25

Linear Derating Factor

)

P_D

T_J, T_STG

T_L

0.33

Operating Junction and

-55 to +150

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

300

Thermal Resistance

Symbol

Characteristic

Junction-to-Case

Case-to-Sink

Typ.

Max.

3.0

Units

R_q

1.7

R_q

Junction-to-Ambient

110

Rev. B

12 3 4 5 6 7

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