Datasheet > IRFU420PBF

IRFU420PBF

更新时间： 2024-11-27 12:08:39

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	4278K
描述
Dynamic dV/dt Rating

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中文翻译

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数据手册

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IRFU420PBF 数据手册

IRFR420, IRFU420, SiHFR420, SiHFU420

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

500

Available

• Repetitive Avalanche Rated

_DS(on)(Ω)

V_GS= 10 V

3.0

RoHS*

COMPLIANT

• Surface Mount (IRFR420/SiHFR420)

Q_g(Max.) (nC)

Q_gs(nC)

3.3

• Straight Lead (IRFU420/SiHFU420)

• Available in Tape and Reel

• Fast Switching

Q_gd(nC)

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

IPAK

(TO-252)

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR120TRLPbF^a

SiHFR120TL-E3^a

IRFR120TRL^a

IPAK (TO-251)

IRFU420PbF

SiHFU420-E3

IRFU420

IRFR420PbF

SiHFR420-E3

IRFR420

IRFR420TRPbF^a

SiHFR420T-E3^a

IRFR420TR^a

Lead (Pb)-free

SnPb

SiHFR420

SiHFR420T^a

SiHFR120TL^a

SiHFU420

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

2.4

Continuous Drain Current

V_GSat 10 V

I_D

1.5

Pulsed Drain Current^a

I_DM

8.0

Linear Derating Factor

0.33

0.020

400

2.4

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

E_AS

I_AR

E_AR

4.2

T_C= 25 °C

T_A= 25 °C

P_D

2.5

dV/dt

3.5

V/ns

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