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IRFU4510PbF PDF预览

IRFU4510PbF

更新时间: 2024-11-18 12:03:31
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
11页 307K
描述
High Efficiency Synchronous Rectification in SMPS

IRFU4510PbF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, IPAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.14雪崩能效等级(Eas):127 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):56 A
最大漏极电流 (ID):56 A最大漏源导通电阻:0.0139 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251AA
JESD-30 代码:R-PSIP-T3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):143 W
最大脉冲漏极电流 (IDM):252 A子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFU4510PbF 数据手册

 浏览型号IRFU4510PbF的Datasheet PDF文件第2页浏览型号IRFU4510PbF的Datasheet PDF文件第3页浏览型号IRFU4510PbF的Datasheet PDF文件第4页浏览型号IRFU4510PbF的Datasheet PDF文件第5页浏览型号IRFU4510PbF的Datasheet PDF文件第6页浏览型号IRFU4510PbF的Datasheet PDF文件第7页 
PD - 97784  
IRFR4510PbF  
IRFU4510PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
S
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
100V  
11.1m  
13.9m  
63A  
G
l Hard Switched and High Frequency Circuits  
56A  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
D
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
S
S
D
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
G
G
DPak  
IRFR4510PbF  
IPAK  
IRFU4510PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
63  
Units  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
45  
56  
252  
143  
PD @TC = 25°C  
Maximum Power Dissipation  
W
0.95  
Linear Derating Factor  
W/°C  
V
± 20  
VGS  
TJ  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
°C  
300  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
Avalanche Characteristics  
EAS (Thermally limited)  
Single Pulse Avalanche Energy  
127  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
50  
Units  
R  
JC  
R  
JA  
R  
JA  
Junction-to-Case  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through ˆ are on page 11  
www.irf.com  
1
05/02/12  

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