IRFU430B

更新时间： 2024-09-14 22:32:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	675K
描述
500V N-Channel MOSFET

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数据手册

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IRFU430B 数据手册

November 2001

IRFR430B / IRFU430B

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction and electronic lamp ballasts based

on half bridge.

•

3.5A, 500V, R

= 1.5Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 25 nC)

Low Crss ( typical 16 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

I-PAK

D-PAK

IRFR Series

IRFU Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRFR430B / IRFU430B

Units

Drain-Source Voltage

500

3.5

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

2.2

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

270

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

3.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.8

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.38

-55 to +150

W/°C

°C

T , T

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.6

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, November 2001

12 3 4 5 6 7...9

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