Datasheet > IRFU4620PBF

IRFU4620PBF

更新时间： 2024-09-15 11:59:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	865K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

数据手册

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IRFU4620PBF 数据手册

IRFR/U4620PBF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

^lUninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

200V

64m

78m

24A

max.

l Hard Switched and High Frequency Circuits

I_D

Benefits

^lImproved Gate, Avalanche and Dynamic dV/dt

Ruggedness

^lFully Characterized Capacitance and Avalanche

SOA

^lEnhanced body diode dV/dt and dI/dt Capability

^lLead-Free

DPak

IRFR4620PbF

IPAK

IRFU4620PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

100

P_D@T_C= 25°C

144

Maximum Power Dissipation

Linear Derating Factor

0.96

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

113

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.045

Units

R_θJC

Junction-to-Case

R_θJA

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

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