IRFR/U5505
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR5505)
l Straight Lead (IRFU5505)
l Advanced Process Technology
l Fast Switching
D
VDSS = -55V
RDS(on) = 0.11Ω
G
ID = -18A
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
I-Pa k
D -Pa k
T O -2 52 A A
TO -2 5 1 AA
The D-Pak is designed for surface mounting using vapor
phase, infrared, orwavesolderingtechniques. Thestraight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-18
-11
A
-64
PD @TC = 25°C
Power Dissipation
57
W
W/°C
V
Linear Derating Factor
0.45
± 20
150
-9.6
5.7
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
-5.0
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
2.2
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
110
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