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IRFU4615PBF PDF预览

IRFU4615PBF

更新时间: 2024-09-15 11:59:31
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管开关脉冲PC
页数 文件大小 规格书
9页 852K
描述
HEXFETPower MOSFET

IRFU4615PBF 数据手册

 浏览型号IRFU4615PBF的Datasheet PDF文件第2页浏览型号IRFU4615PBF的Datasheet PDF文件第3页浏览型号IRFU4615PBF的Datasheet PDF文件第4页浏览型号IRFU4615PBF的Datasheet PDF文件第5页浏览型号IRFU4615PBF的Datasheet PDF文件第6页浏览型号IRFU4615PBF的Datasheet PDF文件第7页 
IRFR/U4615PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
VDSS  
RDS(on) typ.  
150V  
34m  
42m  
33A  
G
max.  
l Hard Switched and High Frequency Circuits  
ID  
S
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
D
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
S
S
D
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
G
G
DPak  
IRFR4615PbF  
IPAK  
IRFU4615PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
33  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
24  
A
140  
PD @TC = 25°C  
W
144  
Maximum Power Dissipation  
Linear Derating Factor  
0.96  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
38  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
109  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.045  
50  
Units  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
www.freescale.net.cn  
1 / 11  

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