Datasheet > IRFU4510

IRFU4510

更新时间： 2024-09-14 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	306K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFU4510 数据手册

PD - 97784

IRFR4510PbF

IRFU4510PbF

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

100V

11.1m

13.9m

63A



l Hard Switched and High Frequency Circuits

56A

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

DPak

IRFR4510PbF

IPAK

IRFU4510PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

Units

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

252

143

P_D@T_C= 25°C

Maximum Power Dissipation

0.95

Linear Derating Factor

W/°C

± 20

V_GS

T_J

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

°C

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

127

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

1.05

Units

R_

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 11

www.irf.com

05/02/12

12 3 4 5 6 7...12

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