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IRFU4615PBF PDF预览

IRFU4615PBF

更新时间: 2024-11-20 11:09:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
11页 392K
描述
HEXFET Power MOSFET

IRFU4615PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:ROHS COMPLIANT, IPAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.14Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:934561
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:IPAK (TO-251AA)
Samacsys Released Date:2020-02-09 12:39:31Is Samacsys:N
雪崩能效等级(Eas):109 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):33 A最大漏极电流 (ID):33 A
最大漏源导通电阻:0.042 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):144 W最大脉冲漏极电流 (IDM):140 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFU4615PBF 数据手册

 浏览型号IRFU4615PBF的Datasheet PDF文件第2页浏览型号IRFU4615PBF的Datasheet PDF文件第3页浏览型号IRFU4615PBF的Datasheet PDF文件第4页浏览型号IRFU4615PBF的Datasheet PDF文件第5页浏览型号IRFU4615PBF的Datasheet PDF文件第6页浏览型号IRFU4615PBF的Datasheet PDF文件第7页 
PD -96206A  
IRFR4615PbF  
IRFU4615PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
S
VDSS  
RDS(on) typ.  
150V  
34m  
42m  
33A  
G
max.  
l Hard Switched and High Frequency Circuits  
ID  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
D
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
S
S
D
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
G
G
DPak  
IRFR4615PbF  
IPAK  
IRFU4615PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
33  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
24  
A
140  
PD @TC = 25°C  
W
144  
Maximum Power Dissipation  
Linear Derating Factor  
0.96  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
38  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
109  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.045  
50  
Units  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
ORDERING INFORMATION:  
See detailed ordering and shipping information on the last page of this data sheet.  
Notes  through ˆ are on page 11  
www.irf.com  
1
06/08/09  

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