IRFU430APBF

更新时间： 2024-09-15 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	299K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFU430APBF 数据手册

PD-95076B

SMPS MOSFET

IRFR430APbF

IRFU430APbF

HEXFET^®Power MOSFET

Applications

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High speed power switching

l Lead-Free

V_DSS

R_DS(on) max

I_D

500V

1.7Ω

5.0A

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective C_OSSspecified (See AN 1001)

D-Pak

IRFR430A

I-Pak

IRFU430A

Absolute Maximum Ratings

Parameter

Max.

5.0

3.2

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

110

W/°C

Linear Derating Factor

0.91

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

3.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Avalanche Characteristics

Parameter

Single Pulse Avalanche Energy

Typ.

Max.

Units

E_AS

I_AR

–––

130

5.0

Avalanche Current

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.1

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

03/02/07

12 3 4 5 6 7...10

中文翻译

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