IRFU420ATU

更新时间： 2024-09-14 13:08:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
9页	650K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFU420ATU 数据手册

November 2001

IRFR420B / IRFU420B

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction and electronic lamp ballasts based

on half bridge.

•

2.3A, 500V, R

= 2.6Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 14 nC)

Low Crss ( typical 10 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

I-PAK

D-PAK

IRFR Series

IRFU Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRFR420B / IRFU420B

Units

Drain-Source Voltage

500

2.3

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

1.5

(Note 1)

Drain Current

- Pulsed

8.0

Gate-Source Voltage

± 30

200

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

2.3

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.1

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.33

-55 to +150

W/°C

°C

T , T

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.05

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, November 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRFU420ATU相关器件

型号	品牌	获取价格	描述	数据表
IRFU420B	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRFU420BTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Met
IRFU420PBF	KERSEMI	获取价格	Dynamic dV/dt Rating
IRFU420PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = 500V , RDS(on) =
IRFU420PBF	VISHAY	获取价格	Power MOSFET
IRFU421	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 2.5A I(D) \| TO-251AA
IRFU422	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.2A I(D) \| TO-251AA
IRFU430A	INFINEON	获取价格	SMPS MOSFET
IRFU430A	KERSEMI	获取价格	Power MOSFET
IRFU430A	VISHAY	获取价格	Power MOSFET