Datasheet > IRFR2407TRL

IRFR2407TRL

更新时间： 2024-11-04 12:08:39

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
10页	3716K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFR2407TRL 数据手册

IRFR2407

IRFU2407

HEXFET^®Power MOSFET

^lSurface Mount (IRFR2407)

^lStraight Lead (IRFU2407)

^lAdvanced Process Technology

^lDynamic dv/dt Rating

^lFast Switching

V_DSS= 75V

R_DS(on)= 0.026Ω

^lFully Avalanche Rated

Description

I_D= 42A

Seventh Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D-Pak

IRFR2407

I-Pak

IRFU2407

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

170

110

0.71

± 20

130

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

www.kersemi.com

12 3 4 5 6 7...10

中文翻译

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