Datasheet > IRFR2905ZTR

IRFR2905ZTR

更新时间： 2024-11-26 12:46:27

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
11页	4071K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRFR2905ZTR 数据手册

AUIRFR2905Z

V_(BR)DSS

55V

11.1m

14.5m

59A

Features

AdvancedProcessTechnology

R_DS(on)typ.

max.

Ω

UltraLowOn-Resistance

175°COperatingTemperature

FastSwitching

I_{D (Silicon Limited)}

I_{D (Package Limited)}

RepetitiveAvalancheAlloweduptoTjmax

Lead-Free,RoHSCompliant

AutomotiveQualified*

42A

Description

SpecificallydesignedforAutomotiveapplications,thisHEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieveextremelylowon-resistancepersiliconarea. Additional

features of this design are a 175°C junction operating

temperature, fast switching speed and improved repetitive

avalancherating.Thesefeaturescombinetomakethisdesign

anextremelyefficientandreliabledeviceforuseinAutomotive

applicationsandawidevarietyofotherapplications.

D-Pak

AUIRFR2905Z

AbsoluteMaximumRatings

Gate

Drain

Source

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice. Theseare

stress ratings only; andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthoseindicatedinthe

specificationsisnotimplied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T = 100°C

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

240

110

@T = 25°C Power Dissipation

W/°C

0.72

Linear Derating Factor

Gate-to-Source Voltage

± 20

E_AS

Single Pulse Avalanche Energy(Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

300 (1.6mm from case )

10 lbf in (1.1N m)

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

–––

Max.

1.38

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

07/20/10

12 3 4 5 6 7...11

中文翻译

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与IRFR2905ZTR相关器件

型号	品牌	获取价格	描述	数据表
IRFR2905ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
IRFR2905ZTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
IRFR2905ZTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
IRFR2905ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
IRFR2905ZTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
IRFR310	KERSEMI	获取价格	Power MOSFET
IRFR310	VISHAY	获取价格	Power MOSFET
IRFR310	INFINEON	获取价格	Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
IRFR310, IRFU310, SiHFR310, SiHFU310	VISHAY	获取价格	Power MOSFET
IRFR310A	FAIRCHILD	获取价格	Advanced Power MOSFET

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