IRFR24N15D

更新时间： 2024-11-03 22:40:55

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
11页	116K
描述
SMPS MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFR24N15D 数据手册

PD - 94392

IRFR24N15D

SMPS MOSFET

IRFU24N15D

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

150V

R_DS(on)max

I_D

24A

95mΩ

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR24N15D

I-Pak

IRFU24N15D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

140

W/°C

Linear Derating Factor

0.92

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

4.9

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.1

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

Notes through ꢀare on page 10

www.irf.com

03/14/02

12 3 4 5 6 7...11

中文翻译

下载PDF

IRFR24N15D 替代型号

型号	品牌	替代类型	描述	数据表
IRFR24N15DTRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Me
IRFR24N15DPBF	INFINEON	功能相似	HEXFET㈢Power MOSFET

与IRFR24N15D相关器件

型号	品牌	获取价格	描述	数据表
IRFR24N15DPBF	INFINEON	获取价格	HEXFET㈢Power MOSFET
IRFR24N15DPBF	KERSEMI	获取价格	SMPS MOSFET
IRFR24N15DTR	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Me
IRFR24N15DTRL	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Me
IRFR24N15DTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Me
IRFR24N15DTRR	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Me
IRFR2605	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
IRFR2605PBF	INFINEON	获取价格	暂无描述
IRFR2605TR	INFINEON	获取价格	Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Met
IRFR2607Z	INFINEON	获取价格	AUTOMOTIVE MOSFET