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IRFR2605 PDF预览

IRFR2605

更新时间: 2024-11-25 22:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 307K
描述
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

IRFR2605 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
PD - 9.1253  
IRFR2605  
IRFU2605  
HEXFET® Power MOSFET  
Ultra Low On-Resistance  
ESD Protected  
D
Surface Mount (IRFR2605)  
Straight Lead (IRFU2605)  
150°C Operating Temperature  
Repetitive Avalanche Rated  
Fast Switching  
VDSS = 55V  
RDS(on) = 0.075Ω  
ID = 19A  
G
Description  
S
Fourth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques that achieve extremely low on-resistance per silicon area  
and allow electrostatic discharge protection to be integrated in the gate structure.  
These benefits, combined with the ruggedized device design that HEXFETs are  
known for, provide the designer with extremely efficient and reliable device for use  
in a wide variety of applications.  
D-PAK  
TO-252AA  
I-PAK  
TO-251AA  
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave  
soldering techniques. The straight lead version (IRFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 watts are possible in  
typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
19  
12  
A
76  
PD @TC = 25°C  
PD @TC = 25°C  
Power Dissipation  
50  
W
Power Dissipation (PCB Mount)**  
Linear Derating Factor  
3.1  
0.40  
0.025  
±20  
100  
12  
W/°C  
Linear Derating Factor (PCB Mount)**  
Gate-to-Source Voltage  
VGS  
V
mJ  
A
EAS  
Single Pulse Avalanche Energy  
Avalanche Current  
IAR  
EAR  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
5.0  
4.5  
mJ  
V/ns  
dv/dt  
TJ, TSTG  
Junction and Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Human Body Model, 100pF, 1.5KΩ  
-55 to + 150  
300 (1.6mm from case)  
2000  
°C  
V
VESD  
Thermal Resistance  
Parameter  
Junction-to-Case  
Min.  
Typ.  
Max.  
2.5  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB Mount)**  
Junction-to-Ambient  
40  
°C/W  
62  
** When mounted on 1" square PCB (FR-4 or G-10 Material).  
For recommended footprint and soldering techniques refer to application note #AN-994.  
To Order  
 

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