Datasheet > IRFR2607ZTRR

IRFR2607ZTRR

更新时间： 2024-11-26 12:08:39

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
11页	4073K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRFR2607ZTRR 数据手册

AUIRFR2607Z

Features

V_(BR)DSS

75V

AdvancedProcessTechnology

R_DS(on)typ.

max.

UltraLowOn-Resistance

175°COperatingTemperature

FastSwitching

17.6m

Ω

22m

45A

Ω

RepetitiveAvalancheAlloweduptoTjmax

Lead-Free,RoHSCompliant

AutomotiveQualified*

I_{D (Silicon Limited)}

I_{D (Package Limited)}

42A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliabledeviceforuseinAutomotiveapplicationsandawide

varietyofotherapplications.

D-Pak

AUIRFR2607Z

Gate

Drain

Source

AbsoluteMaximumRatings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. These

arestressratingsonly;andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthoseindicatedin

thespecificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevice

reliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.

Ambienttemperature(T_A)is25°C, unlessotherwisespecified.

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V (Package Limited)

I_DM

180

Pulsed Drain Current

P_D@T_C= 25°C

110

Power Dissipation

W/°C

0.72

Linear Derating Factor

V_GS

E_AS

± 20

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.38

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

08/24/10

12 3 4 5 6 7...11

中文翻译

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与IRFR2607ZTRR相关器件

型号	品牌	获取价格	描述	数据表
IRFR2905	KERSEMI	获取价格	Advanced Process Technology
IRFR2905	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFR2905Z	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRFR2905ZPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) =
IRFR2905ZPBF	KERSEMI	获取价格	AUTOMOTIVE MOSFET
IRFR2905ZTR	KERSEMI	获取价格	Advanced Process Technology
IRFR2905ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
IRFR2905ZTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
IRFR2905ZTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
IRFR2905ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me

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