Datasheet > IRFR2607ZPBF_15

IRFR2607ZPBF_15

更新时间： 2024-10-02 01:21:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	342K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRFR2607ZPBF_15 数据手册

PD - 95953A

IRFR2607ZPbF

IRFU2607ZPbF

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_DSS= 75V

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

R_DS(on)= 22mΩ

Description

I_D= 42A

ThisHEXFET^®PowerMOSFETutilizesthelatest

processing techniques to achieve extremely low

on-resistancepersiliconarea.Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating.Thesefeaturescombine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

I-Pak

IRFU2607ZPbF

D-Pak

IRFR2607ZPbF

Absolute Maximum Ratings

Parameter

Max.

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

(Package Limited)

@ T = 25°C

180

110

@T = 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.72

± 20

W/°C

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

Operating Junction and

E_AR

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.38

Units

Junction-to-Case

R_θ

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.irf.com

09/16/10

12 3 4 5 6 7...11

中文翻译

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