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IRFR2905 PDF预览

IRFR2905

更新时间: 2024-11-03 22:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 212K
描述
AUTOMOTIVE MOSFET

IRFR2905 数据手册

 浏览型号IRFR2905的Datasheet PDF文件第2页浏览型号IRFR2905的Datasheet PDF文件第3页浏览型号IRFR2905的Datasheet PDF文件第4页浏览型号IRFR2905的Datasheet PDF文件第5页浏览型号IRFR2905的Datasheet PDF文件第6页浏览型号IRFR2905的Datasheet PDF文件第7页 
PD - 95811  
IRFR2905Z  
AUTOMOTIVE MOSFET  
IRFU2905Z  
HEXFET® Power MOSFET  
Features  
D
Advanced Process Technology  
VDSS = 55V  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
RDS(on) = 14.5mΩ  
G
Repetitive Avalanche Allowed up to Tjmax  
ID = 42A  
S
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieve extremely low on-resistance per silicon area. Additional  
features of this design are a 175°C junction operating tempera-  
ture, fast switching speed and improved repetitive avalanche  
rating . These features combine to make this design an extremely  
efficientandreliabledeviceforuseinAutomotiveapplicationsand  
a wide variety of other applications.  
D-Pak  
IRFR2905Z  
I-Pak  
IRFU2905Z  
Absolute Maximum Ratings  
Parameter  
Max.  
59  
Units  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
42  
A
(Package Limited)  
@ T = 25°C  
C
42  
240  
110  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.72  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
55  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
82  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.38  
40  
Units  
Junction-to-Case  
Rθ  
Rθ  
Rθ  
JC  
JA  
JA  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
11/24/03  

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