Datasheet > IRFR310, IRFU310, SiHFR310, SiHFU310

IRFR310, IRFU310, SiHFR310, SiHFU310

更新时间： 2024-11-27 14:55:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	830K
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Power MOSFET

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IRFR310, IRFU310, SiHFR310, SiHFU310

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Repetitive avalanche rated

• Surface-mount (IRFR310, SiHFR310)

• Straight lead (IRFU310, SiHFU310)

• Available in tape and reel

Available

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

Third generation power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

PRODUCT SUMMARY

V_DS(V)

400

R_DS(on)()

V_GS= 10 V

3.6

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

Q_gmax. (nC)

1.9

_gs(nC)

_gd(nC)

6.5

Configuration

Single

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHFR310TRL-GE3 ^a

IRFR310TRLPbF-BE3 ^{a, b}IRFR310TRPbF-BE3 ^{a, b}

IRFR310TRLPbF ^aIRFR310TRPbF ^a

DPAK (TO-252)

SiHFR310TR-GE3 ^a

IPAK (TO-251)

SiHFU310-GE3

SiHFR310-GE3

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHFR310TRR-GE3 ^a

IRFR310PbF

IRFU310PbF

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

400

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

1.7

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

1.1

Pulsed drain current ^a

I_DM

6.0

Linear derating factor

0.20

0.020

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

1.7

Repetitive avalanche energy ^a

E_AR

2.5

Maximum power dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

T_A= 25 °C

2.5

dV/dt

4.0

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 52 mH, R_g= 25 , I_AS= 1.7 A (see fig. 12)

c. I_SD 1.7 A, dI/dt  40 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. When mounted on 1” square PCB (FR-4 or G-10 material)

S23-0902-Rev. F, 30-Oct-2023

Document Number: 91272

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与IRFR310, IRFU310, SiHFR310, SiHFU310相关器件

型号	品牌	获取价格	描述	数据表
IRFR310A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFR310B	FAIRCHILD	获取价格	400V N-Channel MOSFET
IRFR310PBF	VISHAY	获取价格	Power MOSFET
IRFR310PBF	KERSEMI	获取价格	Power MOSFET
IRFR310PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=3.6
IRFR310TR	VISHAY	获取价格	Power MOSFET
IRFR310TRA	KERSEMI	获取价格	Power MOSFET
IRFR310TRL	VISHAY	获取价格	Power MOSFET
IRFR310TRL	KERSEMI	获取价格	Power MOSFET
IRFR310TRLA	KERSEMI	获取价格	Power MOSFET

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