Datasheet > IRFR2607ZPBF

IRFR2607ZPBF

更新时间： 2024-11-26 12:05:07

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
11页	4341K
描述
AUTOMOTIVE MOSFET

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中文翻译

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数据手册

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IRFR2607ZPBF 数据手册

PD - 95953

IRFR2607ZPbF

IRFU2607ZPbF

AUTOMOTIVE MOSFET

Features

HEXFET^®Power MOSFET

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

V_DSS= 75V

R_DS(on)= 22mΩ

Description

I_D= 42A

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processingtechniquestoachieveextremelylowon-

resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledevice

foruseinAutomotiveapplicationsandawidevariety

of other applications.

D-Pak

I-Pak

IRFU2607Z

IRFR2607Z

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T = 25°C

180

110

@T = 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.72

± 20

W/°C

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

Operating Junction and

E_AR

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.38

Units

Junction-to-Case

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

12/21/04

12 3 4 5 6 7...11

中文翻译

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