Datasheet > IRFR24N15DTRR

IRFR24N15DTRR

更新时间： 2024-11-26 21:18:23

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
11页	224K
描述
Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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IRFR24N15DTRR 数据手册

PD - 95370A

IRFR24N15DPbF

IRFU24N15DPbF

HEXFET^®Power MOSFET

SMPS MOSFET

Applications

l High frequency DC-DC converters

l Lead-Free

V_DSS

150V

R_DS(on)max

I_D

24A

95mΩ

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR24N15D

I-Pak

IRFU24N15D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

140

W/°C

Linear Derating Factor

0.92

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

4.9

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.1

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

Notes through ꢀare on page 10

www.irf.com

1/17/05

12 3 4 5 6 7...11

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