Datasheet > IRFR214ATM

IRFR214ATM

更新时间： 2024-09-16 05:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	229K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

获取价格

数据手册

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IRFR214ATM 数据手册

IRFR/U214A

FEATURES

BV_DSS= 250 V

R_DS(on)= 2.0Ω

I_D= 2.2 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

♦

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current: 10 A (Max.) @ V_DS= 250V

Lower R_DS(ON): 1.393 (Typ.)

Ω

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

250

2.2

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25°C)

Continuous Drain Current (T_C=100°C)

Drain Current-Pulsed

I_D

1.4

I_DM

V_GS

E_AS

I_AR

(1)

8.5

Gate-to-Source Voltage

(2)

(1)

(3)

Single Pulsed Avalanche Energy

Avalanche Current

2.2

2.5

4.8

2.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

Total Power Dissipation (T_A=25°C)

Total Power Dissipation (T_C=25°C)

Linear Derating Factor

P_D

0.20

W/°C

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

°C

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_θJC

Characteristic

Typ.

Max.

Units

Junction-to-Case

5.08

R_θJA

Junction-to-Ambient

°C/W

R_θJA

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

中文翻译

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