IRFR220, IRFU220, SiHFR220, SiHFU220
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
200
Available
• Repetitive Avalanche Rated
RoHS*
• Surface Mount (IRFR220/SiHFR220)
COMPLIANT
RDS(on) (Ω)
VGS = 10 V
0.80
Qg (Max.) (nC)
14
3.0
7.9
• Straight Lead (IRFU220/SiHFU220)
• Available in Tape and Reel
• Fast Switching
Q
gs (nC)
Qgd (nC)
Configuration
Single
• Ease of Paralleling
D
• Lead (Pb)-free Available
DPAK
(TO-252)
IPAK
(TO-251)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
S
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR220PbF
SiHFR220-E3
IRFR220
DPAK (TO-252)
DPAK (TO-252)
IRFR220TRPbFa
SiHFR220T-E3a
IRFR220TRa
DPAK (TO-252)
IRFR220TRRPbFa
SiHFR220TR-E3a
IRFR220TRRa
IPAK (TO-251)
IRFU220PbF
SiHFU220-E3
IRFU220
IRFR220TRLPbFa
SiHFR220TL-E3a
IRFR220TRLa
Lead (Pb)-free
SnPb
SiHFR220
SiHFR220TLa
SiHFR220Ta
SiHFR220TRa
SiHFU220
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
200
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
C = 100 °C
4.8
Continuous Drain Current
VGS at 10 V
ID
A
T
3.0
Pulsed Drain Currenta
IDM
19
Linear Derating Factor
0.33
0.020
230
4.8
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
EAS
IAR
mJ
A
Repetitive Avalanche Energya
EAR
4.2
mJ
Maximum Power Dissipation
TC = 25 °C
42
PD
W
V/ns
°C
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TA = 25 °C
2.5
dV/dt
5.0
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
260d
for 10 s
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
c. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 4.8 A (see fig. 12).
d. ISD ≤ 5.2 A, dI/dt ≤ 95 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
e. 1.6 mm from case.
f. When mounted on 1" square PCB (FR-4 or G-10 material).
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