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IRFR220 PDF预览

IRFR220

更新时间: 2024-11-05 12:04:55
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 3962K
描述
Power MOSFET

IRFR220 数据手册

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IRFR220, IRFU220, SiHFR220, SiHFU220  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
200  
Available  
• Repetitive Avalanche Rated  
RoHS*  
• Surface Mount (IRFR220/SiHFR220)  
COMPLIANT  
RDS(on) (Ω)  
VGS = 10 V  
0.80  
Qg (Max.) (nC)  
14  
3.0  
7.9  
• Straight Lead (IRFU220/SiHFU220)  
• Available in Tape and Reel  
• Fast Switching  
Q
gs (nC)  
Qgd (nC)  
Configuration  
Single  
• Ease of Paralleling  
D
• Lead (Pb)-free Available  
DPAK  
(TO-252)  
IPAK  
(TO-251)  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
S
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surcace mount applications.  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
IRFR220PbF  
SiHFR220-E3  
IRFR220  
DPAK (TO-252)  
DPAK (TO-252)  
IRFR220TRPbFa  
SiHFR220T-E3a  
IRFR220TRa  
DPAK (TO-252)  
IRFR220TRRPbFa  
SiHFR220TR-E3a  
IRFR220TRRa  
IPAK (TO-251)  
IRFU220PbF  
SiHFU220-E3  
IRFU220  
IRFR220TRLPbFa  
SiHFR220TL-E3a  
IRFR220TRLa  
Lead (Pb)-free  
SnPb  
SiHFR220  
SiHFR220TLa  
SiHFR220Ta  
SiHFR220TRa  
SiHFU220  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
200  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
C = 100 °C  
4.8  
Continuous Drain Current  
VGS at 10 V  
ID  
A
T
3.0  
Pulsed Drain Currenta  
IDM  
19  
Linear Derating Factor  
0.33  
0.020  
230  
4.8  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
EAS  
IAR  
mJ  
A
Repetitive Avalanche Energya  
EAR  
4.2  
mJ  
Maximum Power Dissipation  
TC = 25 °C  
42  
PD  
W
V/ns  
°C  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TA = 25 °C  
2.5  
dV/dt  
5.0  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
260d  
for 10 s  
Notes  
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
c. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 4.8 A (see fig. 12).  
d. ISD 5.2 A, dI/dt 95 A/µs, VDD VDS, TJ 150 °C.  
e. 1.6 mm from case.  
f. When mounted on 1" square PCB (FR-4 or G-10 material).  
www.kersemi.com  
1

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