IRFR220NTRR

更新时间： 2024-11-03 23:58:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	133K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5A I(D) \| TO-252AA

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中文翻译

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数据手册

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IRFR220NTRR 数据手册

PD- 94048

IRFR220N

IRFU220N

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSSR_DS(on)max (mΩ) I_D

200V

600

5.0A

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR22ON

I-Pak

IRFU220N

Absolute Maximum Ratings

Parameter

Max.

5.0

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.5

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.71

± 20

7.5

V_GS

dv/dt

T_J

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Typical SMPS Topologies

l Telecom 48V input Forward Converters

Notes through ꢀare on page 10

www.irf.com

11/29/00

12 3 4 5 6 7...10

中文翻译

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IRFR220TR	INFINEON	获取价格	Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
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IRFR220TRL	INFINEON	获取价格	Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met