Datasheet > IRFR220TRPBF

IRFR220TRPBF

更新时间： 2024-11-04 12:04:55

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关
页数	文件大小	规格书
7页	3962K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR220TRPBF 数据手册

IRFR220, IRFU220, SiHFR220, SiHFU220

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

200

Available

• Repetitive Avalanche Rated

RoHS*

• Surface Mount (IRFR220/SiHFR220)

COMPLIANT

R_DS(on)(Ω)

V_GS= 10 V

0.80

Q_g(Max.) (nC)

3.0

7.9

• Straight Lead (IRFU220/SiHFU220)

• Available in Tape and Reel

• Fast Switching

_gs(nC)

Q_gd(nC)

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR220PbF

SiHFR220-E3

IRFR220

DPAK (TO-252)

IRFR220TRPbF^a

SiHFR220T-E3^a

IRFR220TR^a

DPAK (TO-252)

IRFR220TRRPbF^a

SiHFR220TR-E3^a

IRFR220TRR^a

IPAK (TO-251)

IRFU220PbF

SiHFU220-E3

IRFU220

IRFR220TRLPbF^a

SiHFR220TL-E3^a

IRFR220TRL^a

Lead (Pb)-free

SnPb

SiHFR220

SiHFR220TL^a

SiHFR220T^a

SiHFR220TR^a

SiHFU220

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

4.8

Continuous Drain Current

V_GSat 10 V

I_D

3.0

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

230

4.8

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

Repetitive Avalanche Energy^a

E_AR

4.2

Maximum Power Dissipation

T_C= 25 °C

P_D

V/ns

°C

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_A= 25 °C

2.5

dV/dt

5.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

c. V_DD= 50 V, starting T_J= 25 °C, L = 14 mH, R_G= 25 Ω, I_AS= 4.8 A (see fig. 12).

d. I_SD≤ 5.2 A, dI/dt ≤ 95 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

e. 1.6 mm from case.

f. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

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与IRFR220TRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR220TRR	KERSEMI	获取价格	Power MOSFET
IRFR220TRR	VISHAY	获取价格	Power MOSFET
IRFR220TRR	INFINEON	获取价格	Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFR220TRRPBF	VISHAY	获取价格	Power MOSFET
IRFR220TRRPBF	KERSEMI	获取价格	Power MOSFET
IRFR221	ROCHESTER	获取价格	4.6A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR222	ROCHESTER	获取价格	3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR222-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRFR222TR	INFINEON	获取价格	Power Field-Effect Transistor, 3.9A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRFR224	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)

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