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IRFR224BTF_FP001 PDF预览

IRFR224BTF_FP001

更新时间: 2024-11-25 14:51:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 667K
描述
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3

IRFR224BTF_FP001 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.72雪崩能效等级(Eas):75 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):3.8 A
最大漏极电流 (ID):3.8 A最大漏源导通电阻:1.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):42 W
最大脉冲漏极电流 (IDM):15.2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR224BTF_FP001 数据手册

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November 2001  
IRFR224B / IRFU224B  
250V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters and  
switch mode power supplies.  
3.8A, 250V, R  
= 1.1@V = 10 V  
DS(on) GS  
Low gate charge ( typical 13.5 nC)  
Low Crss ( typical 9.5 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
G!  
I-PAK  
IRFU Series  
D-PAK  
IRFR Series  
G
S
G D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRFR224B / IRFU224B  
Units  
V
V
I
Drain-Source Voltage  
250  
3.8  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
2.4  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
15.2  
± 30  
75  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
3.8  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
4.2  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
42  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.34  
-55 to +150  
W/°C  
°C  
T , T  
J
stg  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.96  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. B, November 2001  

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