是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.72 | 雪崩能效等级(Eas): | 75 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 3.8 A |
最大漏极电流 (ID): | 3.8 A | 最大漏源导通电阻: | 1.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 42 W |
最大脉冲漏极电流 (IDM): | 15.2 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR224BTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IRFR224BTM_FP001 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR224BTM_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRFR224PBF | VISHAY |
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Power MOSFET | |
IRFR224PBF | INFINEON |
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HEXFET Power MOSFET | |
IRFR224PBF | KERSEMI |
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Power MOSFET | |
IRFR224TR | VISHAY |
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Power MOSFET | |
IRFR224TRA | KERSEMI |
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Power MOSFET | |
IRFR224TRL | KERSEMI |
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Power MOSFET | |
IRFR224TRL | VISHAY |
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Power MOSFET |