IRFR230BTF

更新时间： 2024-11-04 13:08:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
7页	260K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

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技术参数
数据手册

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IRFR230BTF 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.92
配置：	Single	最大漏极电流 (Abs) (ID)：	7.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	50 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

IRFR230BTF 数据手册

IRFR/U230A

Advanced Power MOSFET

FEATURES

BV_DSS= 200 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.4

I_D= 7.5 A

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current : 10 A (Max.) @ V_DS= 200V

Low R_DS(ON): 0.333 (Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

200

7.5

4.8

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25^o

Continuous Drain Current (T_C=100^o

)

I_D

)

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

150

7.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

5.0

2.5

Total Power Dissipation (T =25^o

)

Total Power Dissipation (T_C=25^o

P_D

W/^oC

Linear Derating Factor

0.4

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

^oC

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_qJC

Characteristic

Junction-to-Case

Junction-to-Ambient

Typ.

Max.

Units

2.5

^oC/W

R_qJA

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

中文翻译

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