IRFR2405PBF

更新时间： 2024-11-04 03:58:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
10页	218K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFR2405PBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	LEAD FREE, PLASTIC, DPAK-3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.09
Is Samacsys：	N	Base Number Matches：	1

IRFR2405PBF 数据手册

PD - 95369A

IRFR2405PbF

IRFU2405PbF

HEXFET^®Power MOSFET

l Surface Mount (IRFR2405)

l Straight Lead (IRFU2405)

l Advanced Process Technology

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 55V

l Fully Avalanche Rated

l Lead-Free

R_DS(on)= 0.016Ω

Description

I_D= 56A

Seventh Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D-Pak

IRFR2405

I-Pak

IRFU2405

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

220

110

0.71

± 20

130

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/03/04

12 3 4 5 6 7...10

中文翻译

下载PDF

IRFR2405PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR2405TRPBF	INFINEON	完全替代	Advanced Process Technology
IRFR1018EPBF	INFINEON	类似代替	HEXFET TM Power MOSFET

与IRFR2405PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR2405TR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRFR2405TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时
IRFR2405TRL	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRFR2405TRPBF	INFINEON	获取价格	Advanced Process Technology
IRFR2405TRR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRFR2405TRRPBF	INFINEON	获取价格	暂无描述
IRFR2407	KERSEMI	获取价格	Power MOSFET
IRFR2407	INFINEON	获取价格	Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=4
IRFR2407PBF	KERSEMI	获取价格	ADVANCED PROCESS TECHNOLOGY
IRFR2407PBF	INFINEON	获取价格	HEXFET㈢Power MOSFET

与IRFR2405PBF相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR2405PBF

IRFR2405PBF 技术参数

IRFR2405PBF 数据手册

IRFR2405PBF 替代型号

与IRFR2405PBF相关器件

与IRFR2405PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR2405PBF

IRFR2405PBF 技术参数

IRFR2405PBF 数据手册

IRFR2405PBF 替代型号

与IRFR2405PBF相关器件

与IRFR2405PBF相关文章

您还可以找

您在本页遇到什么问题？