是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 200 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 6.6 A | 最大漏极电流 (ID): | 6.6 A |
最大漏源导通电阻: | 0.45 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 49 W |
最大脉冲漏极电流 (IDM): | 26.4 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR234BTF | FAIRCHILD |
获取价格 |
暂无描述 | |
IRFR234BTM | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IRFR234BTM_FP001 | FAIRCHILD |
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Power Field-Effect Transistor, 6.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR2405 | KERSEMI |
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Surface Mount (IRFR2405) | |
IRFR2405 | INFINEON |
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Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=5 | |
IRFR2405 | FREESCALE |
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HEXFET® Power MOSFET | |
IRFR2405LPBF | INFINEON |
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Surface Mount (IRFR2405) | |
IRFR2405PBF | KERSEMI |
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Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology | |
IRFR2405PBF | INFINEON |
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HEXFET Power MOSFET | |
IRFR2405TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met |