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IRFR2405LPBF

更新时间： 2024-11-04 12:56:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	226K
描述
Surface Mount (IRFR2405)

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中文翻译

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数据手册

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IRFR2405LPBF 数据手册

PD - 95369A

IRFR2405PbF

IRFU2405PbF

HEXFET^®Power MOSFET

l Surface Mount (IRFR2405)

l Straight Lead (IRFU2405)

l Advanced Process Technology

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 55V

l Fully Avalanche Rated

l Lead-Free

R_DS(on)= 0.016Ω

Description

I_D= 56A

Seventh Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D-Pak

IRFR2405

I-Pak

IRFU2405

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

220

110

0.71

± 20

130

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.4

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/03/04

12 3 4 5 6 7...11

中文翻译

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与IRFR2405LPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR2405PBF	KERSEMI	获取价格	Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology
IRFR2405PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR2405TR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRFR2405TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:55V;持续漏极电流（Id）（在25°C时
IRFR2405TRL	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRFR2405TRPBF	INFINEON	获取价格	Advanced Process Technology
IRFR2405TRR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRFR2405TRRPBF	INFINEON	获取价格	暂无描述
IRFR2407	KERSEMI	获取价格	Power MOSFET
IRFR2407	INFINEON	获取价格	Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=4