是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.08 |
其他特性: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 雪崩能效等级(Eas): | 100 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 75 V | 最大漏极电流 (ID): | 42 A |
最大漏源导通电阻: | 0.016 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 210 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AUIRFR2307Z | INFINEON |
完全替代 |
HEXFET® Power MOSFET | |
IRFR2307ZTRLPBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR2307ZPBF | INFINEON |
类似代替 |
HEXFET㈢ Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR2307ZPBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET | |
IRFR2307ZPBF | KERSEMI |
获取价格 |
AUTOMOTIVE MOSFET | |
IRFR2307ZTRL | KERSEMI |
获取价格 |
Advanced Process Technology | |
IRFR2307ZTRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR2307ZTRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR2307ZTRR | KERSEMI |
获取价格 |
Advanced Process Technology | |
IRFR2307ZTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR230A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRFR230B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRFR230BTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |