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IRFR2307Z PDF预览

IRFR2307Z

更新时间: 2024-11-24 21:54:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 301K
描述
AUTOMOTIVE MOSFET

IRFR2307Z 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE雪崩能效等级(Eas):100 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (ID):42 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):210 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR2307Z 数据手册

 浏览型号IRFR2307Z的Datasheet PDF文件第2页浏览型号IRFR2307Z的Datasheet PDF文件第3页浏览型号IRFR2307Z的Datasheet PDF文件第4页浏览型号IRFR2307Z的Datasheet PDF文件第5页浏览型号IRFR2307Z的Datasheet PDF文件第6页浏览型号IRFR2307Z的Datasheet PDF文件第7页 
PD - 96910  
AUTOMOTIVE MOSFET  
IRFR2307Z  
IRFU2307Z  
Features  
HEXFET® Power MOSFET  
lAdvanced Process Technology  
lUltra Low On-Resistance  
l175°C Operating Temperature  
lFast Switching  
D
VDSS = 75V  
lRepetitive Avalanche Allowed up to Tjmax  
RDS(on) = 16mΩ  
G
Description  
ID = 42A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features com-  
bine to make this design an extremely efficient and  
reliable device for use in Automotive applications  
and a wide variety of other applications.  
S
D-Pak  
I-Pak  
IRFU2307Z  
IRFR2307Z  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
53  
D
D
D
C
@ T = 100°C  
38  
42  
A
C
@ T = 25°C  
C
210  
110  
DM  
P
@T = 25°C Power Dissipation  
W
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.70  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
100  
140  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
Operating Junction and  
EAR  
mJ  
T
T
-55 to + 175  
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.42  
40  
Units  
Junction-to-Case  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
–––  
°C/W  
–––  
110  
HEXFET® isaregisteredtrademarkofInternationalRectifier.  
www.irf.com  
1
10/20/04  

IRFR2307Z 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR2307Z INFINEON

完全替代

HEXFET® Power MOSFET
IRFR2307ZTRLPBF INFINEON

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Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
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