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IRFR224PBF PDF预览

IRFR224PBF

更新时间: 2024-11-25 05:39:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 854K
描述
Power MOSFET

IRFR224PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:0.56
其他特性:AVALANCHE RATED雪崩能效等级(Eas):130 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):3.8 A
最大漏极电流 (ID):3.8 A最大漏源导通电阻:1.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):42 W最大脉冲漏极电流 (IDM):15 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFR224PBF 数据手册

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IRFR224, IRFU224, SiHFR224, SiHFU224  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
250  
Available  
• Repetitive Avalanche Rated  
RDS(on) (Ω)  
VGS = 10 V  
1.1  
RoHS*  
• Surface Mount (IRFR224/SiHFR224)  
• Straight Lead (IRFU224/SiHFU224)  
• Available in Tape and Reel  
• Fast Switching  
COMPLIANT  
Qg (Max.) (nC)  
14  
2.7  
Q
Q
gs (nC)  
gd (nC)  
7.8  
Configuration  
Single  
• Ease of Paralleling  
D
• Lead (Pb)-free Available  
DPAK  
(TO-252)  
IPAK  
(TO-251)  
DESCRIPTION  
Third generation Power MOSFETs form Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave solderig techniques. The straight  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface mount applications.  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
IRFR224TRLPbFa  
SiHFR224TL-E3a  
IRFR224TRLa  
IPAK (TO-251)  
IRFU224PbF  
SiHFU224-E3  
IRFU224  
IRFR224PbF  
SiHFR224-E3  
IRFR224  
IRFR224TRPbFa  
SiHFR224T-E3a  
IRFR224TRa  
Lead (Pb)-free  
SnPb  
SiHFR224  
SiHFR224Ta  
SiHFR224TLa  
SiHFU224  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
250  
20  
V
VGS  
TC = 25 °C  
C = 100 °C  
3.8  
Continuous Drain Current  
VGS at 10 V  
ID  
T
2.4  
15  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.33  
0.020  
130  
3.8  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
IAR  
mJ  
A
EAR  
4.2  
mJ  
TC = 25 °C  
TA = 25 °C  
42  
PD  
W
2.5  
dV/dt  
4.8  
V/ns  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91271  
S-Pending-Rev. A, 17-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

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