IRFR224ATM

更新时间： 2024-11-28 13:08:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
9页	671K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR224ATM 数据手册

November 2001

IRFR224B / IRFU224B

250V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters and

switch mode power supplies.

•

3.8A, 250V, R

= 1.1Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 13.5 nC)

Low Crss ( typical 9.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

I-PAK

IRFU Series

D-PAK

IRFR Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRFR224B / IRFU224B

Units

Drain-Source Voltage

250

3.8

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

2.4

(Note 1)

Drain Current

- Pulsed

15.2

± 30

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

3.8

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.2

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.34

-55 to +150

W/°C

°C

T , T

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.96

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, November 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRFR224ATM相关器件

型号	品牌	获取价格	描述	数据表
IRFR224B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRFR224BTF_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met
IRFR224BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFR224BTM_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met
IRFR224BTM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR224PBF	VISHAY	获取价格	Power MOSFET
IRFR224PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFR224PBF	KERSEMI	获取价格	Power MOSFET
IRFR224TR	VISHAY	获取价格	Power MOSFET
IRFR224TRA	KERSEMI	获取价格	Power MOSFET