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IRFR224, IRFU224, SiHFR224, SiHFU224 PDF预览

IRFR224, IRFU224, SiHFR224, SiHFU224

更新时间: 2024-11-26 14:54:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 361K
描述
Power MOSFET

IRFR224, IRFU224, SiHFR224, SiHFU224 数据手册

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IRFR224, IRFU224, SiHFR224, SiHFU224  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
FEATURES  
D
• Dynamic dV/dt rating  
DPAK  
(TO-252)  
IPAK  
(TO-251)  
• Repetitive avalanche rated  
• Surface-mount (IRFR224, SiHFR224)  
• Straight lead (IRFU224, SiHFU224)  
D
D
G
• Available in tape and reel  
Available  
• Fast switching  
• Ease of paralleling  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
G
S
D
G
S
N-Channel MOSFET  
DESCRIPTION  
PRODUCT SUMMARY  
Third generation power MOSFETs form Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance, and  
cost-effectiveness.  
VDS (V)  
250  
RDS(on) (Ω)  
VGS = 10 V  
1.1  
Qg (Max.) (nC)  
14  
2.7  
Q
gs (nC)  
gd (nC)  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave solderig techniques. The straight  
lead version (IRFU, SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface-mount applications.  
Q
7.8  
Configuration  
Single  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
IPAK (TO-251)  
SiHFR224-GE3  
SiHFR224TR-GE3  
SiHFR224TRL-GE3  
SiHFU224-GE3  
Lead (Pb)-free and halogen-free  
IRFR224TRPbF-BE3  
IRFR224PbF  
-
-
-
IRFR224TRPbF a  
IRFR224TRLPbF a  
IRFU224PbF  
-
Lead (Pb)-free  
IRFR224TRRPbF  
-
-
Note  
a. See device orientation  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
250  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
3.8  
Continuous drain current  
VGS at 10 V  
ID  
TC = 100 °C  
2.4  
A
Pulsed drain current a  
IDM  
15  
Linear derating factor  
0.33  
0.020  
130  
W/°C  
Linear derating factor (PCB mount) e  
Single pulse avalanche energy b  
Repetitive avalanche current a  
EAS  
IAR  
mJ  
A
3.8  
Repetitive avalanche energy a  
EAR  
4.2  
mJ  
Maximum power dissipation  
tc = 25 °c  
42  
PD  
W
V/ns  
°C  
Maximum power dissipation (pcb mount) e  
Peak diode recovery dV/dt c  
ta = 25 °c  
2.5  
dV/dt  
4.8  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
TJ, Tstg  
-55 to +150  
260  
For 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)  
b. VDD = 50 V; starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 3.8 A (see fig. 12)  
c. ISD 3.8 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C  
d. 1.6 mm from case  
e. When mounted on 1" square PCB (FR-4 or G-10 material)  
S21-0373-Rev. D, 19-Apr-2021  
Document Number: 91271  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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