Datasheet > IRFR224, IRFU224, SiHFR224, SiHFU224

IRFR224, IRFU224, SiHFR224, SiHFU224

更新时间： 2024-09-17 14:54:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	361K
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Power MOSFET

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IRFR224, IRFU224, SiHFR224, SiHFU224 数据手册

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IRFR224, IRFU224, SiHFR224, SiHFU224

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Repetitive avalanche rated

• Surface-mount (IRFR224, SiHFR224)

• Straight lead (IRFU224, SiHFU224)

• Available in tape and reel

Available

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

PRODUCT SUMMARY

Third generation power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance, and

cost-effectiveness.

V_DS(V)

250

R_DS(on)(Ω)

V_GS= 10 V

1.1

Q_g(Max.) (nC)

2.7

_gs(nC)

_gd(nC)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave solderig techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

7.8

Configuration

Single

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

SiHFR224-GE3

SiHFR224TR-GE3

SiHFR224TRL-GE3

SiHFU224-GE3

Lead (Pb)-free and halogen-free

IRFR224TRPbF-BE3

IRFR224PbF

IRFR224TRPbF ^a

IRFR224TRLPbF ^a

IRFU224PbF

Lead (Pb)-free

IRFR224TRRPbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

250

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

3.8

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

2.4

Pulsed drain current ^a

I_DM

Linear derating factor

0.33

0.020

130

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Repetitive avalanche current ^a

E_AS

I_AR

3.8

Repetitive avalanche energy ^a

E_AR

4.2

Maximum power dissipation

t_c= 25 °c

P_D

V/ns

°C

Maximum power dissipation (pcb mount) ^e

Peak diode recovery dV/dt ^c

t_a= 25 °c

2.5

dV/dt

4.8

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V; starting T_J= 25 °C, L = 14 mH, R_g= 25 Ω, I_AS= 3.8 A (see fig. 12)

c. I_SD≤ 3.8 A, dI/dt ≤ 90 A/μs, V_DD≤ V_DS, T_J≤ 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0373-Rev. D, 19-Apr-2021

Document Number: 91271

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与IRFR224, IRFU224, SiHFR224, SiHFU224相关器件

型号	品牌	获取价格	描述	数据表
IRFR224A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 3.8A I(D) \| TO-252AA
IRFR224ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR224ATM	FAIRCHILD	获取价格	暂无描述
IRFR224B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRFR224BTF_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met
IRFR224BTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFR224BTM_FP001	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met
IRFR224BTM_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFR224PBF	VISHAY	获取价格	Power MOSFET
IRFR224PBF	INFINEON	获取价格	HEXFET Power MOSFET

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