IRFR224, IRFU224, SiHFR224, SiHFU224
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
• Dynamic dV/dt rating
DPAK
(TO-252)
IPAK
(TO-251)
• Repetitive avalanche rated
• Surface-mount (IRFR224, SiHFR224)
• Straight lead (IRFU224, SiHFU224)
D
D
G
• Available in tape and reel
Available
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
G
S
D
G
S
N-Channel MOSFET
DESCRIPTION
PRODUCT SUMMARY
Third generation power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance, and
cost-effectiveness.
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
1.1
Qg (Max.) (nC)
14
2.7
Q
gs (nC)
gd (nC)
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave solderig techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface-mount applications.
Q
7.8
Configuration
Single
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
SiHFR224-GE3
SiHFR224TR-GE3
SiHFR224TRL-GE3
SiHFU224-GE3
Lead (Pb)-free and halogen-free
IRFR224TRPbF-BE3
IRFR224PbF
-
-
-
IRFR224TRPbF a
IRFR224TRLPbF a
IRFU224PbF
-
Lead (Pb)-free
IRFR224TRRPbF
-
-
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
250
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
TC = 25 °C
3.8
Continuous drain current
VGS at 10 V
ID
TC = 100 °C
2.4
A
Pulsed drain current a
IDM
15
Linear derating factor
0.33
0.020
130
W/°C
Linear derating factor (PCB mount) e
Single pulse avalanche energy b
Repetitive avalanche current a
EAS
IAR
mJ
A
3.8
Repetitive avalanche energy a
EAR
4.2
mJ
Maximum power dissipation
tc = 25 °c
42
PD
W
V/ns
°C
Maximum power dissipation (pcb mount) e
Peak diode recovery dV/dt c
ta = 25 °c
2.5
dV/dt
4.8
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TJ, Tstg
-55 to +150
260
For 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V; starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 3.8 A (see fig. 12)
c. ISD ≤ 3.8 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)
S21-0373-Rev. D, 19-Apr-2021
Document Number: 91271
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000