型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR220TRRPBF | VISHAY |
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Power MOSFET | |
IRFR220TRRPBF | KERSEMI |
获取价格 |
Power MOSFET | |
IRFR221 | ROCHESTER |
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4.6A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | |
IRFR222 | ROCHESTER |
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3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | |
IRFR222-T1 | SAMSUNG |
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Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR222TR | INFINEON |
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Power Field-Effect Transistor, 3.9A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRFR224 | INFINEON |
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Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A) | |
IRFR224 | KERSEMI |
获取价格 |
Power MOSFET | |
IRFR224 | VISHAY |
获取价格 |
Power MOSFET | |
IRFR224, IRFU224, SiHFR224, SiHFU224 | VISHAY |
获取价格 |
Power MOSFET |