Datasheet > IRFR220TRLPBF

IRFR220TRLPBF

更新时间： 2024-11-06 12:04:55

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	3962K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFR220TRLPBF 数据手册

IRFR220, IRFU220, SiHFR220, SiHFU220

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

200

Available

• Repetitive Avalanche Rated

RoHS*

• Surface Mount (IRFR220/SiHFR220)

COMPLIANT

R_DS(on)(Ω)

V_GS= 10 V

0.80

Q_g(Max.) (nC)

3.0

7.9

• Straight Lead (IRFU220/SiHFU220)

• Available in Tape and Reel

• Fast Switching

_gs(nC)

Q_gd(nC)

Configuration

Single

• Ease of Paralleling

• Lead (Pb)-free Available

DPAK

(TO-252)

IPAK

(TO-251)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR220PbF

SiHFR220-E3

IRFR220

DPAK (TO-252)

IRFR220TRPbF^a

SiHFR220T-E3^a

IRFR220TR^a

DPAK (TO-252)

IRFR220TRRPbF^a

SiHFR220TR-E3^a

IRFR220TRR^a

IPAK (TO-251)

IRFU220PbF

SiHFU220-E3

IRFU220

IRFR220TRLPbF^a

SiHFR220TL-E3^a

IRFR220TRL^a

Lead (Pb)-free

SnPb

SiHFR220

SiHFR220TL^a

SiHFR220T^a

SiHFR220TR^a

SiHFU220

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

4.8

Continuous Drain Current

V_GSat 10 V

I_D

3.0

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

0.020

230

4.8

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

Repetitive Avalanche Energy^a

E_AR

4.2

Maximum Power Dissipation

T_C= 25 °C

P_D

V/ns

°C

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_A= 25 °C

2.5

dV/dt

5.0

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

c. V_DD= 50 V, starting T_J= 25 °C, L = 14 mH, R_G= 25 Ω, I_AS= 4.8 A (see fig. 12).

d. I_SD≤ 5.2 A, dI/dt ≤ 95 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

e. 1.6 mm from case.

f. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与IRFR220TRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR220TRPBF	VISHAY	获取价格	Power MOSFET
IRFR220TRPBF	KERSEMI	获取价格	Power MOSFET
IRFR220TRR	KERSEMI	获取价格	Power MOSFET
IRFR220TRR	VISHAY	获取价格	Power MOSFET
IRFR220TRR	INFINEON	获取价格	Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFR220TRRPBF	VISHAY	获取价格	Power MOSFET
IRFR220TRRPBF	KERSEMI	获取价格	Power MOSFET
IRFR221	ROCHESTER	获取价格	4.6A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR222	ROCHESTER	获取价格	3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
IRFR222-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met

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