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IRFR220ATM PDF预览

IRFR220ATM

更新时间: 2024-11-04 13:08:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
7页 258K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

IRFR220ATM 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92配置:Single
最大漏极电流 (Abs) (ID):4.6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

IRFR220ATM 数据手册

 浏览型号IRFR220ATM的Datasheet PDF文件第2页浏览型号IRFR220ATM的Datasheet PDF文件第3页浏览型号IRFR220ATM的Datasheet PDF文件第4页浏览型号IRFR220ATM的Datasheet PDF文件第5页浏览型号IRFR220ATM的Datasheet PDF文件第6页浏览型号IRFR220ATM的Datasheet PDF文件第7页 
IRFR/U220A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 200 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.8  
ID = 4.6 A  
Improved Gate Charge  
Extended Safe Operating Area  
D-PAK  
I-PAK  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 200V  
Low RDS(ON) : 0.626 (Typ.)  
W
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
200  
4.6  
Units  
VDSS  
Drain-to-Source Voltage  
Continuous Drain Current (TC=25o  
Continuous Drain Current (TC=100o  
V
)
C
ID  
A
)
C
2.9  
IDM  
VGS  
EAS  
IAR  
Drain Current-Pulsed  
18  
A
V
1
O
+
_
30  
Gate-to-Source Voltage  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
71  
mJ  
A
O
4.6  
4
1
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (T =25o  
mJ  
V/ns  
W
1
O
3
5.0  
2.5  
40  
O
*
)
)
C
A
Total Power Dissipation (TC=25o  
PD  
W
C
W/oC  
Linear Derating Factor  
0.32  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
Purposes, 1/8 “ from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
RqJC  
Characteristic  
Junction-to-Case  
Junction-to-Ambient  
Junction-to-Ambient  
Typ.  
Max.  
Units  
--  
--  
--  
3.14  
50  
oC/W  
RqJA  
*
RqJA  
110  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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