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IRFR220N PDF预览

IRFR220N

更新时间: 2024-11-05 12:33:43
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体开关晶体管脉冲
页数 文件大小 规格书
10页 3739K
描述
SMPS MOSFET

IRFR220N 数据手册

 浏览型号IRFR220N的Datasheet PDF文件第2页浏览型号IRFR220N的Datasheet PDF文件第3页浏览型号IRFR220N的Datasheet PDF文件第4页浏览型号IRFR220N的Datasheet PDF文件第5页浏览型号IRFR220N的Datasheet PDF文件第6页浏览型号IRFR220N的Datasheet PDF文件第7页 
PD- 94048  
IRFR220N  
IRFU220N  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS RDS(on) max (mΩ) ID  
200V  
600  
5.0A  
Benefits  
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR22ON  
I-Pak  
IRFU220N  
Absolute Maximum Ratings  
Parameter  
Max.  
5.0  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
3.5  
A
20  
PD @TC = 25°C  
Power Dissipation  
43  
W
W/°C  
V
Linear Derating Factor  
0.71  
± 20  
7.5  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
www.kersemi.com  
1
11/29/00  

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